Temperature dependence of lasing wavelength in a GaInNAs laser diode

The temperature dependence of lasing wavelength in 1.2-/spl mu/m or 1.3-/spl mu/m-range GaInNAs edge-emitting laser diodes (LD) was found to be small. It is almost independent of the characteristic temperature (T/sub 0/) and is equivalent to the temperature shift of the bandgap wavelength of GaInNAs (0.42 nm//spl deg/C). Since the dependence is smaller than that of 1.3-/spl mu/m-range conventional InGaAsP LD's and also smaller than the required value (<0.48 nm//spl deg/C), it is concluded that the GaInNAs LD's are promising for use as 1.3-/spl mu/m-range light sources because of their lasing-wavelength stability against temperature shift and a high T/sub 0/. The small dependence is due to the small effect of band filling on lasing wavelength from the deep quantum well in GaInNAs LD's.

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