The hot-electron problem in small semiconductor devices

Decreasing device dimensions will cause an increasing internal field strength in a semiconductor device. The average carrier energy is different from the thermal equilibrium value 3/2 kT. Modification of current transport is considered on different levels of approximation. In a local approximation we derive a field‐dependent carrier mobility and temperature from a more general self‐consistent formulation. Numerical estimation of hot‐electron effects are given for a realistic n‐channel metal‐oxide‐semiconductor field‐effect transistor of various channel lengths. It is shown that both high‐field and field‐gradient effects will contribute.

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