On the Correlation between Morphology and Electronic Properties of Fluorinated Copper Phthalocyanine (F16CuPc) Thin Films

We report on the correlation between morphology and electronic properties of fluorinated copper phthalocyanine (F16CuPc) thin films deposited on SiO2/Si substrates at different substrate temperatures. Highly ordered films with the 200 plane spacing of d200 = 14.3 Å is observed. Increasing the substrate temperature significantly improves the molecular ordering of F16CuPc, and the smallest FWHM was gained at a substrate temperature of 120°C. The mobility is strongly dependent on the substrate temperature. Increasing in grain size at higher substrate temperatures improves the mobility of F16CuPc TFTs, but gaps generated between grains degrade the performance of F16CuPc TFTs at a substrate temperature higher than 110°C. When deposition of F16CuPc is done at a substrate temperature of 100°C, the maximum mobility of 4.25 × 10−3 cm2/Vs. can be obtained.

[1]  Debra J. Mascaro,et al.  Organic thin-film transistors: A review of recent advances , 2001, IBM J. Res. Dev..

[2]  Richard H. Friend,et al.  Ultrathin organic photovoltaic devices , 1999 .

[3]  Yaochun Shen,et al.  IMPROVEMENT IN PHOTOELECTRIC CONVERSION OF A PHTHALOCYANINE-SENSITIZED TIO2 ELECTRODE BY DOPING WITH PORPHYRIN , 1998 .

[4]  Kai Xiao,et al.  Influence of the substrate temperature during deposition on film characteristics of copper phthalocyanine and field-effect transistor properties , 2003 .

[5]  Ullrich Mitschke,et al.  The electroluminescence of organic materials , 2000 .

[6]  Zhenan Bao,et al.  New Air-Stable n-Channel Organic Thin Film Transistors , 1998 .

[7]  M. Hanack,et al.  Organic single- and double-layer electroluminescent devices based on substituted phthalocyanines , 1999 .

[8]  G. Horowitz,et al.  Mobility in Polycrystalline Oligothiophene Field‐Effect Transistors Dependent on Grain Size , 2000 .

[9]  G. McHale,et al.  The effect of NO2 doping on the gas sensing properties of copper phthalocyanine thin film devices , 2000 .

[10]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[11]  Nicola Cioffi,et al.  Organic thin film transistors: from active materials to novel applications , 2001 .

[12]  T. Komoda,et al.  Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors , 2002 .

[13]  G. Palasantzas,et al.  Temperature dependence of the growth front roughening of oligomer films , 2002 .

[14]  D. Yan,et al.  Organic thin-film transistors in sandwich configuration , 2004 .

[15]  Francis Garnier,et al.  Thin-film transistors based on organic conjugated semiconductors , 1998 .

[16]  GROWTH CONDITIONS EFFECTS ON MORPHOLOGY AND TRANSPORT PROPERTIES OF PENTACENE THIN FILMS , 2003 .

[17]  Gilles Horowitz,et al.  Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors , 2000 .