论文信息 - Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices - 字舞流文

Electrical properties of oxidized polycrystalline silicon as a gate insulator for n-type 4H-SiC MOS devices

Ravi Shankar R. Velampati | J. Ayers | Ángel Rodríguez | F. Jain | P. Li | B. Yarlagadda | Peng Li