Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

1 School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA 2 Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, Utah 84112, USA 3 Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA 4 Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA 5 Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, USA

[1]  Safumi Suzuki,et al.  Structure dependence of oscillation characteristics of resonant-tunneling-diode terahertz oscillators associated with intrinsic and extrinsic delay times , 2015 .

[2]  R. Landauer,et al.  Generalized many-channel conductance formula with application to small rings. , 1985, Physical review. B, Condensed matter.

[3]  Shingo Saito,et al.  Frequency-tunable resonant-tunneling-diode terahertz oscillators applied to absorbance measurement , 2017 .

[4]  Quantum transport in GaN/AlN double-barrier heterostructure nanowires. , 2010, Nano letters.

[5]  Benjamin Bird,et al.  Quantum Cascade Lasers in Biomedical Infrared Imaging. , 2015, Trends in biotechnology.

[6]  H.J. De Los Santos,et al.  Physics-based RTD current-voltage equation , 1996, IEEE Electron Device Letters.

[7]  Masahiro Tsuchiya,et al.  Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths , 1986 .

[8]  Santino D. Carnevale,et al.  Single nanowire AlN/GaN double barrier resonant tunneling diodes with bipolar tunneling at room and cryogenic temperatures , 2013 .

[9]  S. Datta,et al.  Importance of space-charge effects in resonant tunneling devices , 1987 .

[10]  Huili Grace Xing,et al.  Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2 , 2018 .

[11]  C. T. Foxon,et al.  Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes , 2006 .

[12]  K. Berland,et al.  Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures , 2011, 1102.4977.

[13]  Paul R. Berger,et al.  Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy , 2016 .

[14]  C. T. Foxon,et al.  Resonance and current instabilities in AlN/GaN resonant tunnelling diodes , 2004 .

[15]  G. Snider,et al.  A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh , 1990 .

[16]  Paul R. Berger,et al.  431 kA/cm 2 peak tunneling current density in GaN/AlN resonant tunneling diodes , 2018 .

[17]  D. Indjin,et al.  Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices , 2015 .

[18]  Lee,et al.  Effect of inelastic processes on resonant tunneling in one dimension. , 1985, Physical review letters.

[19]  M. Vitiello,et al.  Quantum cascade lasers: a versatile source for precise measurements in the mid/far-infrared range , 2013 .

[20]  Tsui,et al.  Evidence for LO-phonon-emission-assisted tunneling in double-barrier heterostructures. , 1987, Physical review. B, Condensed matter.

[21]  Jue Wang,et al.  Resonant tunneling diode oscillators for optical communications , 2017, Applications of Optics and Photonics.

[22]  R. Dimitrov,et al.  Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures , 2000 .

[23]  Rajaram Bhat,et al.  Three-dimensional interface roughness in layered semiconductor structures and its effect on intersubband transitions , 2015 .

[24]  Safumi Suzuki,et al.  1.98 THz resonant-tunneling-diode oscillator with reduced conduction loss by thick antenna electrode , 2017, 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

[25]  R. Landauer,et al.  Electrical transport in open and closed systems , 1987 .

[26]  Bruno Ricco,et al.  Physics of resonant tunneling. The one-dimensional double-barrier case , 1984 .

[27]  Safumi Suzuki,et al.  Fundamental Oscillation up to 1.42 THz in Resonant Tunneling Diodes by Optimized Collector Spacer Thickness , 2014 .

[28]  J. Faist,et al.  Quantum Cascade Laser , 1994, Science.

[29]  M. Jonson,et al.  Effect of inelastic scattering on resonant and sequential tunneling in double barrier heterostructures , 1987 .

[30]  T. C. L. G. Sollner,et al.  Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes , 1989 .

[31]  Debdeep Jena,et al.  Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures , 2010, Science.

[32]  N. Klein,et al.  Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures , 2007 .

[33]  M. Asif Khan,et al.  Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions , 1992 .

[34]  S. Pavlov,et al.  High Resolution Terahertz Spectroscopy with Quantum Cascade Lasers , 2013 .

[35]  Jen-Inn Chyi,et al.  AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy , 2002 .

[36]  Patrick Fay,et al.  Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. , 2009 .

[37]  Ali Soltani,et al.  Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes , 2011 .

[38]  P. J. Price Resonant tunneling properties of heterostructures , 1986 .

[39]  Tokio Takahashi,et al.  Investigating the bistability characteristics of GaN/AlN resonant tunneling diodes for ultrafast nonvolatile memory , 2015 .

[40]  N. Harada,et al.  Lifetime of Resonant State in a Resonant Tunneling System , 1986 .

[41]  Serge Luryi,et al.  Frequency limit of double‐barrier resonant‐tunneling oscillators , 1985 .

[42]  Werner Schrenk,et al.  Negative differential resistance in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN , 2006 .

[43]  Richard A. Kiehl,et al.  High speed heterostructure devices , 1994 .

[44]  M. Razeghi,et al.  Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes , 2010 .

[45]  O. Ambacher,et al.  Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN , 2002, cond-mat/0209664.

[46]  M. Razeghi,et al.  AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition , 2010 .

[47]  P. Alam,et al.  H , 1887, High Explosives, Propellants, Pyrotechnics.

[48]  Martin Eickhoff,et al.  Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes , 2004 .

[49]  Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon , 2012, 1202.6052.

[50]  T. Tokizaki,et al.  Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well , 2014, IEEE Transactions on Electron Devices.

[51]  A. E. Belyaev,et al.  Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures , 2003 .

[52]  M. Razeghi,et al.  Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes , 2010 .

[53]  Gerhard Klimeck,et al.  Quantum device simulation with a generalized tunneling formula , 1995 .

[54]  Huili Grace Xing,et al.  New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes , 2017 .

[55]  Manijeh Razeghi,et al.  Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance , 2012, OPTO.

[56]  Liang Tang,et al.  Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates , 2012 .

[57]  Liang Tang,et al.  Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures , 2013 .

[58]  Katsumi Kishino,et al.  AlGaN Resonant Tunneling Diodes Grown by rf-MBE , 2001 .

[59]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[60]  Safumi Suzuki,et al.  Wireless data transmission of 30 Gbps at a 500-GHz range using resonant-tunneling-diode terahertz oscillator , 2016, 2016 IEEE MTT-S International Microwave Symposium (IMS).

[61]  M. Büttiker Coherent and sequential tunneling in series barriers , 1988 .