The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

The technological development of application specific VDMOS and lateral trench power MOSFETs is described. Unlike general-purpose trench vertical DMOS, application specific trench DMOS comprise devices merged or optimized for a specific function or characteristic. Examples include the bidirectional lithium ion battery disconnect switch, the airbag squib driver with safety redundancy, the antilock breaking systems solenoid driver with repeated avalanche operation, and various forms of synchronous rectifiers (including integrated Schottky and pseudo-Schottky operation). Trench lateral DMOS include all implant quasi-vertical, lateral trench, and lateral trench charge balanced devices. Trench power MOSFET packaging addresses multichip surface mount, DrMOS, low inductance, and clip lead packages.

[1]  Christopher Bridge.  The Implication of Synchronous Rectifiers to the Design of Isolated , Single-Ended Forward Converters , 2001 .

[2]  R. K. Williams,et al.  Optimization of complementary power DMOSFETs for low-voltage high-frequency DC-DC conversion , 1995, Proceedings of 1995 IEEE Applied Power Electronics Conference and Exposition - APEC'95.

[3]  R. K. Williams,et al.  Benefits of DMOS voltage scaling on synchronous buck regulator efficiency , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[4]  Jean-Marie Dorkel,et al.  Source electrode evolution of a low voltage power MOSFET under avalanche cycling , 2009, Microelectron. Reliab..

[5]  N. Fujishima,et al.  Integrated Bi-directional Trench Lateral Power MOSFETs for One Chip Lithium-ion Battery Protection ICs , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[6]  M. Chang,et al.  Optimizing the trade-off between the RDS(on) of power MOSFETs and linear mode perfomance by local modification of MOSFET gain , 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[7]  P. Rutter,et al.  Understanding Linear-Mode Robustness in Low-Voltage Trench Power MOSFETs , 2010, IEEE Transactions on Device and Materials Reliability.

[8]  Hao Wang,et al.  FOM (Figure of Merit) Analysis for Low Voltage Power MOSFETs in DC-DC Converter , 2007, 2007 IEEE Conference on Electron Devices and Solid-State Circuits.

[10]  Zhengming John Zhang,et al.  Safety of Lithium-Ion Batteries , 2014 .

[11]  D. Kinzer.  Advances in power switch technology for 40 V - 300 V applications , 2005, 2005 European Conference on Power Electronics and Applications.

[12]  Xiaosong Huang,et al.  Separator technologies for lithium-ion batteries , 2011 .

[13]  C.A.T. Salama,et al.  A 30 V class extremely low on-resistance meshed trench lateral power MOSFET , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[14]  Setsuo Kajiwara,et al.  A high density, low on-resistance p-channel trench lateral power MOSFET for high side switches , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

[15]  James B. Robinson,et al.  In-operando high-speed tomography of lithium-ion batteries during thermal runaway , 2015, Nature Communications.

[16]  Stefan Decker,et al.  Effective and reliable heat management for power devices exposed to cyclic short overload pulses , 2013, Microelectron. Reliab..

[18]  N. Fujishima,et al.  Low Gate Charge 20V Class Trench-aligning Lateral Power MOSFET , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

[19]  Akio Nakagawa,et al.  Improved 20 V lateral trench gate power MOSFETs with very low on-resistance of 7.8 m/spl Omega//spl middot/mm/sup 2/ , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[20]  Mohamed N. Darwish,et al.  The dual-gate W-switched power MOSFET: a new concept for improving light load efficiency in DC/DC converters , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

[21]  Rudolf P. Severns,et al.  Modern DC-to-DC switchmode power converter circuits , 1985 .

[22]  Chenming Hu.  Optimum doping profile for minimum ohmic resistance and high-breakdown voltage , 1979, IEEE Transactions on Electron Devices.

[23]  Yuanzheng Zhu,et al.  Folded gate LDMOS transistor with low on-resistance and high transconductance , 2001 .

[24]  P. Rutter,et al.  Low voltage MOSFET optimized for low VDS transient voltages , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[25]  Lina Guo,et al.  Performance analysis of trench power MOSFETs in high-frequency synchronous buck converter applications , 2008 .

[26]  Stefan Decker,et al.  A reliable technology concept for active power cycling to extreme temperatures , 2011, Microelectron. Reliab..

[27]  Richard K. Williams,et al.  MOSFET flyback-diode conduction and dV/dt effects in power ICs in low-voltage motor control applications , 1991, [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.

[28]  Daniel Schleisser,et al.  Repetitive avalanche of automotive MOSFETs , 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).

[29]  N. Fujishima,et al.  High density, low on-resistance, high side N-channel trench lateral power MOSFET with thick copper metal , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[30]  R. K. Williams.  Beyond Y2K: technology convergence as a driver of future low-voltage power management semiconductors , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[31]  曹丹,et al.  A protection circuit , 2015 .

[32]  D. Kinzer,et al.  Mosfet Technology Advances Dc-dc Converter Efficiency for Processor Power , .

[33]  R. Siemieniec,et al.  A new robust power MOSFET family in the voltage range 80 V-150 V with superior low R/sub Dson/, excellent switching properties and improved body diode , 2005, 2005 European Conference on Power Electronics and Applications.

[34]  Richard Van Noorden.  The rechargeable revolution: A better battery , 2014, Nature.

[36]  Krishna Shenai,et al.  Monolithically integrated power MOSFET and Schottky diode with improved reverse recovery characteristics , 1990 .

[37]  H.P.E. Xu,et al.  SJ-FINFET: A New Low Voltage Lateral Superjunction MOSFET , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[38]  M. Darwish,et al.  A 1 million-cell 2.0-m/spl Omega/ 30-V TrenchFET utilizing 32 Mcell/in/sup 2/ density with distributed voltage clamping , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[39]  Jon Gladish,et al.  MOSFET Selection to Minimize Losses in Low-Output-Voltage DC-DC Converters , 2008 .

[40]  N. Fujishima,et al.  Second-generation one chip li-ion battery protection IC with an Asymmetric Bidirectional Trench Lateral Power MOSFET , 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[41]  Ralf Walter,et al.  DEVELOPMENT OF LOW-VOLTAGE POWER MOSFET BASED ON APPLICATION REQUIREMENT ANALYSIS , 2015 .

[43]  R. Siemieniec,et al.  A New Fast and Rugged 100 V Power MOSFET , 2006, 2006 12th International Power Electronics and Motion Control Conference.

[44]  V. d'Alessandro,et al.  Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[45]  Jaume Roig,et al.  Internal self-damping optimization in trench power FETs for high-frequency conversion , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

[46]  Joachim N. Burghartz.  Power Devices and ICs , 2013 .

[47]  Ihsiu Ho,et al.  Enhanced Electrical and Thermal Properties of Trench Metal–Oxide–Semiconductor Field-Effect Transistor Built on Copper Substrate , 2009, IEEE Electron Device Letters.

[48]  C.A.T. Salama,et al.  A trench lateral power MOSFET using self-aligned trench bottom contact holes , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[49]  N. Fujishima,et al.  High side n-channel and bidirectional Trench Lateral Power MOSFETs on one chip for DCDC converter ICs , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[50]  苏凯,et al.  Battery charge control circuit , 2010 .

[51]  R. Siemieniec,et al.  A new power MOSFET generation designed for synchronous rectification , 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

[52]  Kwangsoo Kim,et al.  A Novel Structure for the Improved Switching Time of 50V Class Vertical Power MOSFET , 2015 .

[53]  Ralf Walter,et al.  An improved and low-resistive package for high-current MOSFET , 2015, 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).

[54]  T. Sano,et al.  20 V and 8 V lateral trench gate power MOSFETs with record-low on-resistance , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[56]  Jingjing Chen.  Design optimal built-in snubber in trench field plate power MOSFET for superior EMI and efficiency performance , 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[57]  Pankaj Arora,et al.  Battery separators. , 2004, Chemical reviews.

[58]  Robert W. Erickson,et al.  DC–DC Power Converters , 2007 .

[59]  C. Salama,et al.  A high density, low on-resistance, trench lateral power MOSFET with a trench bottom source contact , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

[60]  R. Siemieniec,et al.  Robustness of MOSFET devices under hard commutation ofthe body diode , 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).

[61]  G. Breglio,et al.  Thermal instabilities in high current power MOS devices: experimental evidence, electro-thermal simulations and analytical modeling , 2002, 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).

[62]  Phil Rutter,et al.  Low voltage superjunction power MOSFET: An application optimized technology , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[63]  J. Andrews,et al.  Optimizing oxide charge balanced devices for Unclamped Inductive Switching (UIS) , 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).