A novel base drive circuit for accurate measurement and modeling of high-speed power bipolar transistors
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Accurate model development for bipolar transistors requires test circuits for reliable characterization of the device. Dynamic performance of bipolar transistors is studied by switching the base current through the device under specified load conditions. An all-MOSFET base drive circuit is proposed for abrupt switching of base current. The circuit operates on a dual power supply, and features easily adjustable forward and reverse base currents, with abrupt transition.