Total-Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments
暂无分享,去创建一个
[1] Dose Enhancement Effects in MOSFET IC's Exposed in Typical 60Co Facilities , 1983, IEEE Transactions on Nuclear Science.
[2] G. F. Derbenwick,et al. CMOS Hardness Prediction for Low-Dose-Rate Environments , 1977, IEEE Transactions on Nuclear Science.
[3] F. B. McLean. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures , 1980, IEEE Transactions on Nuclear Science.
[4] P. S. Winokur,et al. Physical Mechanisms Contributing to Device "Rebound" , 1984, IEEE Transactions on Nuclear Science.
[5] H. E. Boesch,et al. Total Dose Indujced Hole Trapping and Interface State Generation in Bipolar Recessed Field Oxides , 1985, IEEE Transactions on Nuclear Science.
[6] P. S. Winokur,et al. Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors , 1977, IEEE Transactions on Nuclear Science.
[7] P. S. Winokur,et al. Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.
[8] David K. Myers,et al. Ionizing Radiation Effects on Various Commercial NMOS Microprocessors , 1977, IEEE Transactions on Nuclear Science.
[9] P. Winokur,et al. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .
[10] Paltiel Buchman,et al. Total Dose Hardness Assurance for Microcircuits for Space Environment , 1986, IEEE Transactions on Nuclear Science.
[11] P. S. Winokur,et al. Predicting CMOS Inverter Response in Nuclear and Space Environments , 1983, IEEE Transactions on Nuclear Science.
[12] P. S. Winokur,et al. Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing , 1986, IEEE Transactions on Nuclear Science.