Subquarter-micrometer p-channel MOSFET's with 80 nm S/D junctions

Subquarter-micrometer p-channel MOSFET's with extremely shallow S/D junctions (80 nm) and ultra thin gate oxide (3.5 nm) have been fabricated. The threshold voltage of -0.64V and a maximum transconductance of 280 mS/mm have been achieved for 0.18 μm gate length MOSFET's.