7.4 Gbit monolithically integrated GaAs/AlGaAs laser diode-laser driver structure
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Wolfgang Bronner | M. Ludwig | J. Hornung | B. Raynor | Klaus Köhler | W. Benz | Z.-G. Wang | P. Ganser | E. Olander
[1] T. Egawa,et al. Monolithic integration of AlGaAs/GaAs MQW laser diode and GaAs MESFET grown on Si using selective regrowth , 1992, IEEE Photonics Technology Letters.
[2] Geoffrey W. Taylor,et al. Monolithic integration of lasers with FET and bipolar transistors in inversion channel technology , 1993 .
[3] Wolfgang Bronner,et al. 14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver , 1993 .
[4] R. D. Yadvish,et al. Monolithic integration of InGaAsP/InP lasers and heterostructure bipolar transistors by selective area epitaxy , 1993 .
[5] J. Fleissner,et al. Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy , 1991 .
[6] Y. Sasai,et al. Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors , 1984 .