Study of the Carrier Concentration Effect on Si Enhanced AlGaAs/GaAs Superlattice Mixing

We have investigated the carrier concentration effect on AlGaAs/GaAs superlattice mixing enhanced by Si doping. The Al 0.01 Ga 0.99 As/GaAs superlattice sample with various Si-doping concentrations was grown by molecular beam epitaxy (MBE). Secondary ion mass spectrometry (SIMS) and carrier concentration profiling were used to characterize the Al diffusion and the free-carrier concentration profiles. The Al diffusion coefficients at 800 C show a high power dependence on the free carrier concentration which is not consistent with a Ga vacancy diffusion mechanism. A possible explanation can be provided by a mechanism based on a Si pair diffusion model.

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