Improved latch-up immunity in junction-isolated smart power ICs with unbiased guard ring

The performance of the unbiased guard ring structure is measured and the effects of high current, emitter area, and layout of unbiased guard rings are reported and explained. Measurements show a reduction in parasitic gain by up to six orders of magnitude, while also avoiding the cross talk and power consumption of biased rings. A comparative analysis of unbiased guard ring with biased guard ring shows up to 100 times better performance at low current levels. A modification to the unbiased guard ring is also implemented and successfully tested which shows an increase in the current handling capability of the structure by an order of magnitude.

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