10 Watts UHF broadband GaN based power amplifier for multi-band applications

The demand of broadband amplifier has been boosted to meet the requirements of multi-mode and multi-band wireless applications. GaN HEMT is the next generation of RF power transistor technology. In this paper, we have designed a 10W UHF broadband class-AB Power Amplifier (PA) based on GaN HEMT. The proposed amplifier has been designed and developed in the frequency range from 200-500 MHz. A maximum drain efficiency of 71% is achieved.

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