Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance
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S. Nau | Wolfgang Stolz | Kerstin Volz | Bernardette Kunert | Oleg Rubel | K. Volz | B. Kunert | W. Stolz | O. Rubel | S. Nau | S. Reinhard | T. Torunski | S. Reinhard | T. Torunski
[1] Wolfgang Stolz,et al. Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films , 2003 .
[2] S. Kurtz,et al. Structural changes during annealing of GaInAsN , 2001 .
[3] Richard M. Martin,et al. Elastic Properties of ZnS Structure Semiconductors , 1970 .
[4] P. Bogusławski,et al. GaAs:N vs GaAs:B alloys: Symmetry-induced effects , 2001 .
[5] Nelson Tansu,et al. Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers , 2003 .
[6] Takeshi Kitatani,et al. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance , 1996 .
[7] É. Tournié,et al. On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells , 2001 .
[8] A. Zunger,et al. Deep nitrogen-induced valence- and conduction-band states in GaAs1-xNx , 2003 .
[9] Andrew G. Glen,et al. APPL , 2001 .
[10] Sarah R. Kurtz,et al. 1-eV solar cells with GaInNAs active layer , 1998 .
[11] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[12] L. Bellaiche. Band gaps of lattice-matched (Ga,In)(As,N) alloys , 1999 .
[13] Wei,et al. Giant and composition-dependent optical bowing coefficient in GaAsN alloys. , 1996, Physical review letters.
[14] James S. Harris,et al. 1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE , 2003 .
[15] W. Richter,et al. Tertiarybutylhydrazine: a new precursor for the MOVPE of Group III-nitrides , 1999 .
[16] A. Zunger,et al. Theory of electronic structure evolution in GaAsN and GaPN alloys , 2001 .
[17] Wolfgang Stolz,et al. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 /spl mu/m , 1999 .
[18] S. Rushworth,et al. Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium , 2000 .
[19] Eric Daniel Jones,et al. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs , 1999 .
[20] T. Kitatani,et al. Molecular beam epitaxy of GaInNAs by using solid source arsenic , 2001 .
[21] P. N. Keating,et al. Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure , 1966 .