Comparison Between Output CM Chokes for SiC Drive Operating at 20- and 200-kHz Switching Frequencies

The adoption of silicon carbide (SiC) MOSFETs in variable speed drives (VSDs) makes it possible to increase the inverter switching frequency up to several hundred kilohertz without incurring excessive inverter loss. As a result, the harmonic currents and related losses in the machine can be significantly reduced, and the dynamic performance of motor will also be improved. However, the high switching frequency will increase the common mode (CM) electromagnetic interference (EMI) emission of the drive system presenting new challenges on CM choke design. In the literature, chokes designed for VSDs operating above 100 kHz are rarely found. Hence, this paper presents a case study on the output CM chokes for a SiC-based VSD switching at 20 and 200 kHz. A comprehensive comparison is made between the chokes for two switching frequencies regarding design, sizing, and performance, through both calculation and experiments. The results show that the CM choke designed for 200 kHz switching frequency is significantly larger and heavier than the 20 kHz choke, due to the higher inductance value required to meet the EMI limit and the lower permeability of the core material. Meanwhile, the 200 kHz choke is also less effective in noise attenuation as a result of the larger winding capacitance compared with the 20 kHz choke.

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