论文信息 - Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 /spl mu/m

Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 /spl mu/m

Vertical cavity surface emitting lasers with a highly strained InGaAs quantum well are demonstrated. Room temperature continuous wave operation was achieved, with a lasing wavelength at 1.22 µm. A high slope efficiency of 0.63 W/A and a maximum power around 1 mW were achieved.

P. D. Dapkus | Sang-Wan Ryu | P. Dapkus | S. Ryu

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