论文信息 - 130-GHz f/sub T/ SiGe HBT technology

130-GHz f/sub T/ SiGe HBT technology

A real emitter/base heterojunction was formed with the optimization of the vertical profile of the transistor, and good crystallinity of SiGe was achieved by using a UHV/CVD system with high-pressure H/sub 2/ precleaning of the substrate. As a result, a record cutoff frequency up to 130 GHz and the current gain up to 29,000 were obtained with a graded and uniform Ge profiles, respectively.

[1] A. Schuppen,et al. SiGe-HBTs with high fT at moderate current densities , 1994 .

[2] Hermann Schumacher,et al. Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/ , 1995, Proceedings of International Electron Devices Meeting.

[3] J. Sturm,et al. Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps , 1991, IEEE Electron Device Letters.

[4] A. Oki,et al. Experimental study of AlGaAs/GaAs HBT device design for power applications , 1991, IEEE Electron Device Letters.

[5] J.M.C. Stork,et al. Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors , 1993, Proceedings of IEEE International Electron Devices Meeting.