Microwave GaAs Power FET Amplifiers with Lumped-Element Impedance Matching Networks

Lumped-element impedance matching has been used successfully for the design of GaAs power FET amplifiers at C- and X bands. It is shown that output powers up to 8W with 1 dB bandwidth of from 1 to 5 GHz can be obtained.

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[2]  Hua Tserng,et al.  X-band MIC GaAs power FET amplifier module , 1978, 1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.