Attenuation of millimeterwave coplanar lines on gallium arsenide and indium phosphide over the range 1-60 GHz

Extensive attenuation data of coplanar lines on semi-insulating GaAs and InP are presented over the frequency range 1-60 GHz. On-wafer measurements were used to obtain the S-parameters. A ground-to-ground spacing of 30, 60, and 120 mu m, typical of that used in today's microwave and millimeter-wave integrated circuit applications, was investigated. The center line width (impedance) and the evaporated gold metal thickness were varied. For the frequency range investigated (metal thickness less than 2-3 times the skin depth), the attenuation was found to be inversely proportional to the metal thickness.<<ETX>>

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