An Optimization Method of Deep Submicron SOI Compact Model Parameter Extraction

As Silicon-On-Insulator (SOI) rapidly advances to the vanguard of ULSI technology, compact model parameter extraction for SOI still relies on indirect methods. Floating body (FB) device parameter extraction is currently based on body contact (BC) device parameter extraction. However, the underlying physics of these two devices is quite different, and therefore, have distinctively different characteristics. In this work we report a novel method to directly extract parameters of a FB device. In addition to standard model parameters, we have been able to extract gate current, impact ionization current, GIDL current, as well as diode and parasitic BJT currents, using only a FB device.