High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure
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N. Kumagai | K. Endo | M. Shimizu | S. Samukawa | Tokio Takahashi | Xue-Lun Wang | G. Cong | Kexiong Zhang | D. Ohori