Optimization of operation temperature of gate commutated thyristors for hybrid DC breaker

Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Thyristors (IGCTs) are widely used in high voltage HCBs due to their controllable turn-off capabilities under high power conditions. The focus of this paper is on the optimization of operation temperature when Gate Commutated Thyristors (GCTs) are applied in HCB applications. The operation conditions of GCTs in HCB are first discussed. Under those considerations, a 2-D finite element model of GCT is developed to investigate the influence of the GCT's operation temperature on the Maximum Controllable Current (MCC) and the Safe Operation Area (SOA). Impedance unevenly distributed along the full wafer has been calculated to obtain accurate simulation results. Results show GCTs can provide a higher MCC by operating at a higher temperature.

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