论文信息 - Determination of YBaCuO thin layer structural parameters by using high-resolution X-ray diffractometry

Determination of YBaCuO thin layer structural parameters by using high-resolution X-ray diffractometry

YBa2Cu3O7-x thin layers grown with a magnetron sputtering technique have been thoroughly investigated by using various X-ray diffractometry schemes. High-resolution triple-crystal setting has proved to be a powerful tool for identifying basic types of damage: out-of-plane grain misorientations, microstrain and grain size. By using double-axis modes, layer thickness and composition were extracted. The lattice parameter c of the layer was measured and discussed in comparison with that of bulk high-temperature superconductor crystals. The results obtained have promoted an essential extension of the range of the YBaCuO layer structural characteristics.

[1] J. Budai,et al. In‐plane epitaxial alignment of YBa2Cu3O7−x films grown on silver crystals and buffer layers , 1993 .

[2] M. Hong,et al. In situ formation of YBa2Cu3Ox thin films by physical sputtering , 1989 .

[3] C. Eom,et al. In situ grown YBa2Cu3O7−d thin films from single‐target magnetron sputtering , 1989 .

[4] J. Bravman,et al. Growth of YBa2Cu3O7−δ on vicinally polished MgO substrates , 1990 .

[5] R. D. Reus,et al. Relation between critical current densities and epitaxy of YBa2Cu3O7 thin films on MgO(100) and SrTiO3(100) , 1992 .

[6] P. Boolchand,et al. Comparison of transport and magnetization critical currents in c‐axis‐oriented Y1Ba2Cu3O7−δ thin films , 1992 .

[7] Yury A. Kovalenko,et al. Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates , 1993 .

[8] Reginald W. James,et al. The Optical principles of the diffraction of X-rays , 1948 .

[9] J. Kittl,et al. Correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering , 1990 .

[10] X. Xi,et al. Growth of YBaCuO thin films on random and (100) aligned ZrO2 substrates , 1989 .