Influence of a high-power laser beam on electrophysical and photoelectrical properties of epitaxial films of CdxHg1-xTe (x is approximately equal to 0.2)

I n t he gi yen wor k photoel ec t r i c al and el ec t r ophys i c al pr oper t i es of the epitaxial films of Cd Hg Te have been measured before and x i-x after laser treatment. It has been shown that the resistance of the fi 1 m at the temper atur e T300 K has been i ncr eased by 3 fol d after exposing to several pulses of the laser . A rising of the resistance dun rig a 1 ong ti me after 1 aser treatment was al so noti ci abi e. As a resul t of gal vanomagneti c measurements taken yei1 ds that the concentr ati on of the i ntr i nsi c car r I er s had been i ncr eased from i5 -3 io -a 2. 6xl0 cm to 6x1 0 cm due to the 1 aser tr eatment . Fur ther the mobility of carriers decreased by about 100. According to the measurement of Hall coefficient in the region of impurity conduction at the temperature T K the hole concentrati on has become greater and the concentration of electrons has become lesser due to the laser treatment. Such changes of concentr ati on of el ectr ons coi nci de wi th the results of photoelectric measurements. Lifetime of