Growth of GaN and AlN thin films by laser induced molecular beam epitaxy
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[1] R. Williams,et al. Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001) , 1997 .
[2] D. Kisker,et al. SURFACE LIFETIMES OF GA AND GROWTH BEHAVIOR ON GAN (0001) SURFACES DURING MOLECULAR BEAM EPITAXY , 1996 .
[3] X. W. Sun,et al. Growth of c‐axis oriented gallium nitride thin films on an amorphous substrate by the liquid‐target pulsed laser deposition technique , 1996 .
[4] S. Porowski. High pressure growth of GaN — new prospects for blue lasers , 1996 .
[5] Fu Rong. LIQUID TARGET PULSED LASER DEPOSITION , 1995 .
[6] Jagdish Narayan,et al. Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition , 1995 .
[7] Wen-Tai Lin,et al. Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation , 1995 .
[8] Fernando Ponce,et al. High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .
[9] H. H. Klingenberg,et al. High power diode‐pumped Nd:YAG regenerative amplifier for picosecond pulses , 1994 .
[10] Tetsu Kachi,et al. Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride , 1994 .
[11] C. B. Carter,et al. Oriented aluminum nitride thin films deposited by pulsed‐laser ablation , 1991 .
[12] T. Sasaki,et al. Substrate‐polarity dependence of metal‐organic vapor‐phase epitaxy‐grown GaN on SiC , 1988 .
[13] G. Scamarcio,et al. First order Raman scattering in GaN , 1986 .
[14] J. Marinace,et al. Raman scattering in thin‐film waveguides , 1973 .