Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel

High Mobility Channel N. Horiguchi, G. Zschaetzsch 1 , Y. Sasaki, A.K. Kambham 1 , M. Togo, M. Cho, L. -Å. Ragnarsson, G. Hellings, J. Mitard, J. Franco, G. Eneman, L. Witters, N. Waldron, D. Lin, L. Pantisano, N. Collaert, W. Vandervorst 1 and A. Thean Imec, Kapeldreef 75, B-3001 Leuven, Belgium Phone: +32-16-28-77-13 E-mail: Naoto.Horiguchi@imec.be 1 also Institute voor Kern and Stralings Fysika, K. U. Leuven, Leuven, Belgium