论文信息 - InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 10 19 cm −3 . Ideality factors ( ceo 's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.

P. Wisk | F. Ren | S. Pearton | C. Abernathy | R. Esagui

[1] F. Ren,et al. InGaP/GaAs single- and double-heterojunction bipolar transistors grown by organometallic vapour phase epitaxy , 1992 .

[2] F. Alexandre,et al. Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy , 1990 .

[3] H. Kroemer,et al. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy , 1985, IEEE Electron Device Letters.

[4] H. Kroemer,et al. Heterostructure bipolar transistors and integrated circuits , 1982, Proceedings of the IEEE.

[5] S. Sze,et al. AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP , 1966 .