A 190 GHz VCO with Transformer-Based Push–Push Frequency Doubler in 40 nm CMOS

A 190 GHz voltage-controlled oscillator (VCO) with transformer-based push–push frequency doubler in 40 nm CMOS is presented. The layout optimization reduces the parasitics of the transistors. To achieve high output power at a target operating frequency of 190 GHz, design considerations are discussed and a transformer-based push–push frequency doubler is introduced. The digital controlled artificial dielectric transmission line is proposed in replacement of switched-capacitor arrays whose capacitance is more susceptible to process variation. The presented circuit occupies 390 × 430 µm2 die area including the pads and consumes 57.6 mW DC power from a 0.9 V power supply. The proposed VCO achieves a measured continuous tuning range from 181.9 to 195.5 GHz. The measured output power at 195.5 GHz is − 7.26 dBm which is estimated with the typical conversion loss of harmonic mixer. The measured phase noise at 10 MHz offset is − 97.18 dBc/Hz.