Capacitive inertial sensing at high temperatures of up to 400 °C

High-temperature-resistant inertial sensors are increasingly requested in a variety of fields such as aerospace, automotive and energy. Capacitive detection is especially suitable for sensing at high temperatures due to its low intrinsic temperature dependence. In this paper, we present high-temperature measurements utilizing a capacitive accelerometer, thereby proving the feasibility of capacitive detection at temperatures of up to 400 degrees C. We describe the observed characteristics as the temperature is increased and propose an explanation of the physical mechanisms causing the temperature dependence of the sensor, which mainly involve the temperature dependence of the Young's modulus and of the viscosity and the pressure of the gas inside the sensor cavity. Therefore a static electromechanical model and a dynamic model that takes into account squeeze film damping were developed. (C) 2015 Elsevier B.V. All rights reserved.

[1]  Yung C. Liang,et al.  The effects of non-parallel plates in a differential capacitive microaccelerometer , 1999 .

[2]  Jiangang Du,et al.  High-temperature single-crystal 3C-SiC capacitive pressure sensor , 2004, IEEE Sensors Journal.

[3]  Naoki Ono,et al.  Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method , 2000 .

[4]  F. Rudolf,et al.  New generation of high performance/high reliability MEMS accelerometers for harsh environment , 2014, 2014 IEEE/ION Position, Location and Navigation Symposium - PLANS 2014.

[5]  A. Sherman Growth and properties of LPCVD titanium nitride as a diffusion barrier for silicon device technology , 1990 .

[6]  Makoto Ishida,et al.  A three-axis accelerometer for high temperatures with low temperature dependence using a constant temperature control of SOI piezoresistors , 2003, The Sixteenth Annual International Conference on Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE.

[7]  Gustave C. Fralick,et al.  Development and application of high-temperature sensors and electronics for propulsion applications , 2006, SPIE Defense + Commercial Sensing.

[8]  Joseph Johnson,et al.  High-Temperature Piezoelectric Sensing , 2013, Sensors.

[9]  John C. Hecker Scientific Foundations of Vacuum Technique. , 1962 .

[10]  J. J. Blech On Isothermal Squeeze Films , 1983 .

[11]  W. Sutherland LII. The viscosity of gases and molecular force , 1893 .

[12]  R.W. Johnson,et al.  The changing automotive environment: high-temperature electronics , 2004, IEEE Transactions on Electronics Packaging Manufacturing.

[13]  Xiaoning Jiang,et al.  Piezoelectric accelerometer for high temperature (1300°C) sensing , 2012, Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring.

[14]  S. Senturia Microsystem Design , 2000 .

[15]  T. Kenny,et al.  What is the Young's Modulus of Silicon? , 2010, Journal of Microelectromechanical Systems.

[16]  A. Shkel,et al.  Single-mask fabrication of high-G piezoresistive accelerometers with extended temperature range , 2007 .

[17]  Yasumasa Okada,et al.  Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K , 1984 .

[18]  T. Veijola,et al.  Equivalent-circuit model of the squeezed gas film in a silicon accelerometer , 1995 .

[19]  R. Maboudian,et al.  Vapor phase anti-stiction coatings for MEMS , 2003 .

[20]  Srinivas Tadigadapa,et al.  Piezoelectric MEMS sensors: state-of-the-art and perspectives , 2009 .

[21]  R. C. Weast CRC Handbook of Chemistry and Physics , 1973 .

[22]  Yan Haixia,et al.  A novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances , 2009 .

[23]  M. Mehregany,et al.  Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications , 2006, IEEE Sensors Journal.