论文信息 - Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method - 字舞流文

Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method

J. Sumakeris | M. Dudley | B. Raghothamachar | Jianqiu Guo | Yu Yang | R. Leonard | O. Goue | F. Wu

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[4] Michael Dudley,et al. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties , 1999 .