Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

A giant electromechanical d33 coefficient 110pC∕N is obtained in ferroelectric V-doped ZnO films, which is nearly one order of magnitude higher than that of undoped samples. It is considered that the switchable spontaneous polarization induced by V dopants and the accompanying relatively high permittivity should be responsible for the enhancement of piezoelectric response. Moreover, from another point of view, an easier rotation of V–O bonds which are noncollinear with c axis under electric field might be the microscopic origin of this anomaly. The improved piezoelectric properties could make V-doped ZnO a promising candidate for piezoelectric devices.

[1]  Posternak,et al.  Ab initio study of piezoelectricity and spontaneous polarization in ZnO. , 1994, Physical review. B, Condensed matter.

[2]  Dhananjay,et al.  Dielectric properties of c-axis oriented Zn1−xMgxO thin films grown by multimagnetron sputtering , 2006 .

[3]  U. Waghmare,et al.  First-principles study of strain-electronic interplay in ZnO: stress and temperature dependence of the piezoelectric constants , 2000, cond-mat/0007215.

[4]  G. W. Groves,et al.  The debonding and pull-out of ductile wires from a brittle matrix , 1979 .

[5]  Takayuki Shibata,et al.  Characterization of sputtered ZnO thin film as sensor and actuator for diamond AFM probe , 2002 .

[6]  Masashi Kawasaki,et al.  Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature , 1997 .

[7]  Sergei V. Kalinin,et al.  Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces , 2002 .

[8]  Dhananjay,et al.  Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation , 2006 .

[9]  H. Fu,et al.  Large electromechanical response in ZnO and its microscopic origin , 2005 .

[10]  T. Sawada,et al.  Dielectric Activity and Ferroelectricity in Piezoelectric Semiconductor Li-Doped ZnO , 1996 .

[11]  Hyun-Chul Choi,et al.  The fabrication of thin-film bulk acoustic wave resonators employing a ZnO/Si composite diaphragm structure using porous silicon layer etching , 1999 .

[12]  Angus I. Kingon,et al.  Piezoelectric measurements with atomic force microscopy , 1998 .

[13]  Yuchao Yang,et al.  V5+ ionic displacement induced ferroelectric behavior in V-doped ZnO films , 2007 .

[14]  A. Safari,et al.  Characterization of the effective electrostriction coefficients in ferroelectric thin films , 2001 .

[15]  Tomoji Kawai,et al.  Magnetic and electric properties of vanadium doped ZnO films , 2001 .

[16]  Zhong Lin Wang,et al.  Piezoelectric Characterization of Individual Zinc Oxide Nanobelt Probed by Piezoresponse Force Microscope , 2004 .

[17]  Tomoji Kawai,et al.  Magnetic and electric properties of transition-metal-doped ZnO films , 2001 .