Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects
暂无分享,去创建一个
Fadhel M. Ghannouchi | Ammar B. Kouki | A. Birafane | Pouya Aflaki | A. Kouki | F. Ghannouchi | A. Birafane | Pouya Aflaki
[1] M. Sudow,et al. Thermal Study of the High-Frequency Noise in GaN HEMTs , 2009, IEEE Transactions on Microwave Theory and Techniques.
[2] Fadhel M. Ghannouchi,et al. Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design , 2010 .
[3] H. Zirath,et al. A new empirical nonlinear model for HEMT and MESFET devices , 1992 .
[4] T. Paszkiewicz,et al. Thermal conductivity of GaN crystals in 4.2-300 K range , 2003 .
[5] J. Laskar,et al. Thermal analysis of AlGaN-GaN power HFETs , 2003 .
[6] J. Laskar,et al. Improved RF modeling techniques for enhanced AlGaN/GaN HFETs , 2003, IEEE Microwave and Wireless Components Letters.
[7] Christian Fager,et al. Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model , 2002 .
[8] K. Webb,et al. A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC , 2004, IEEE Transactions on Microwave Theory and Techniques.
[9] S. Keller,et al. High breakdown GaN HEMT with overlapping gate structure , 2000, IEEE Electron Device Letters.
[10] K. Doverspike,et al. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates , 1999, IEEE Electron Device Letters.
[11] D. Barataud,et al. Characterization and modeling of nonlinear trapping effects in power SiC MESFETs , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).
[12] J.E. Daniel,et al. Direct measurement of thermal circuit parameters using pulsed IV and the normalized difference unit , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
[13] U. Mishra,et al. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs , 2001 .
[14] Stephen A. Maas,et al. Nonlinear microwave circuits , 1988 .
[15] N.B. Carvalho,et al. Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design , 2004, IEEE Transactions on Microwave Theory and Techniques.
[16] K. Linthicum,et al. Characteristics of microwave power GaN HEMTs on 4-inch Si wafers , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
[17] Charles Baylis,et al. Modeling considerations for GaN HEMT devices , 2009, 2009 IEEE 10th Annual Wireless and Microwave Technology Conference.
[18] J. Staudinger,et al. An examination of data based large signal models for wireless amplifiers , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.
[19] I. Angelov,et al. Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .
[20] G. Meneghesso,et al. Surface-related drain current dispersion effects in AlGaN-GaN HEMTs , 2004, IEEE Transactions on Electron Devices.