论文信息 - Band‐gap shifts in silicon‐germanium heterojunction bipolar transistors

Band‐gap shifts in silicon‐germanium heterojunction bipolar transistors

The band gap of the base of Si1−xGex strained‐layer base heterojunction bipolar transistors has been investigated using minority‐carrier transport measurements. We have found a band‐gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si0.85Ge0.15 show a band‐gap reduction less than predicted, suggesting a reduction of strain in the structure.

J. Sturm | E. Prinz | P. Garone | P. Schwartz

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