论文信息 - Simulation and Realization of MOS Varactors

Simulation and Realization of MOS Varactors

Abstract MOS varactors have been used commonly as tuning components in LC-tank voltage-controlled oscillators (VCOs) based on standard CMOS technology. MOS varactor topologies include traditional D=S=B structure, inversion-mode (I-MOS) structure and accumulation- mode (A-MOS) structure. A novel simulation method of the three MOS varactors is proposed. The A-MOS structures are implemented by developed models, which are based on sub-circuits utilizing BSIM3v3 models. Simulation results show that the I-MOS and A-MOS varactors has a wider tuning range than the D=S=B varactor. Three MOS varactors are implemented in CSMC 0.5um CMOS technology.

Tao Zhang | Shuai Li

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