Thermophotovoltaic Solar Energy Converters on the Basis AVBVI
暂无分享,去创建一个
The problems of a solar energy conversion to electrical power by means of thermophotovoltaic systems on base A<sup>V</sup>B<sup>VI</sup> are considered for high concentration solar applications. As p-n-junctions it is offered to use monocrystals Bi<sub>2</sub>Te<sub>3 </sub> p-type and Bi<sub>2</sub>Se<sub>3</sub> n-type conduction. P-n film structures of p-Bi<sub>2</sub>Te<sub>3</sub>-n-Bi<sub>2</sub>Se<sub>3</sub>, received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for usage in thermophotovoltaic devices. It is demonstrated, that the wide spectrum of sensitivity and stability to the concentrated solar radiation of thermophotovoltaic elements on the basis of A<sup>V </sup>B<sup>VI</sup> are advantage in comparison with traditional solar cells. The accurate modelling of concentrator solar cells with thermophotovoltaic converters is absolutely necessary in order to guide the technology to increase the performance of these devices
[1] Richard M. Swanson,et al. Point-contact silicon solar cells , 1984, IEEE Transactions on Electron Devices.