论文信息 - A high order temperature curvature compensated CMOS bandgap reference

A high order temperature curvature compensated CMOS bandgap reference

This paper presents a second-order corrected bandgap reference (BGR) based on TSMC 0.35μm 2P3M CMOS process. This novel proposed CMOS bandgap reference take advantage of the high temperature coefficient (TC) of some resistors, to compensate the high-order temperature curvature of the base-emitter voltage (VBE). This circuit can achieve temperature coefficient of 1.5ppm/°C for temperature from -40 to 120°C at 5 V power supply. The proposed circuit will find application in the high precision analog and digital circuits.

Changzhi Lv | Shuojie She | Zhenyu Peng

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