Reliability Model of Bandgap Engineered SONOS (BE-SONOS)

Reliability properties of bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005) are extensively studied. First, the erase mechanism of BE-SONOS is confirmed as substrate hole tunneling through the ultra-thin ONO tunneling dielectric. Next, very long-term (>3,000 hours) high-temperature baking data (from 150 to 250degC) for various programmed/erased states and cycling history are collected and analyzed for a thorough understanding of the retention property. By transforming retention data (VFB-time) into de-trapping current (J) and modeling its dependence on electric field and temperature, the long-term retention of various programmed states are consistently and accurately predicted. This modeling technique avoids the ambiguity of the common Arrhenius plot, and is useful for developing other predictive models too. We have shown that BE-SONOS surpasses the 10-year 85degC storage criterion for Flash memory applications

[1]  Kinam Kim,et al.  Technology for sub-50nm DRAM and NAND flash manufacturing , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[2]  Y. Shih,et al.  BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[3]  Yang Yang,et al.  Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures , 2000 .

[4]  Chih-Yuan Lu,et al.  A transient analysis method to characterize the trap vertical location in nitride-trapping devices , 2004, IEEE Electron Device Letters.

[5]  Hang-Ting Lue,et al.  Novel soft erase and re-fill methods for a P/sup +/-poly gate nitride-trapping non-volatile memory device with excellent endurance and retention properties , 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

[6]  Satish Kumar,et al.  Model to predict reliability of ONO non-volatile memory , 2001, 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580).

[7]  Hang-Ting Lue,et al.  A novel p-channel NAND-type flash memory with 2-bit/cell operation and high programming throughput (> 20 MB/sec) , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..