650 V Highly Reliable GaN HEMTs on Si Substrates over multiple generations: Expanding usage of a mature 150 mm Si Foundry
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K. Kiuchi | K. Imanishi | L. McCarthy | L. Shen | YiFeng Wu | P. Parikh | T. Hosoda | Y. Asai | Yoshiyuki Kotani | J. Gritters | R. Barr | T. Ogino | S. Chowdhury | Peter Smith
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