Microcavity GalaAs/GaAs surface-emitting laser with Ith = 6 mA
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A circular buried microcavity 7 μm long and 6 μm in diameter has been realised. We obtained Ith = 6mA, ηd = 9% and peak power ≥1 mW at 20.5°C at single mode. The first CW operation of a GaAlAs/GaAs surface-emitting laser with Ith = 4.5 mA at 77 K was also realised.
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