Ultrathin nitrided-nanolaminate (Al2O3/ZrO2/Al2O3) for metal–oxide–semiconductor gate dielectric applications

An ultrathin nanolaminate (Al2O3/ZrO2/Al2O3) film prepared by atomic layer chemical vapor deposition was investigated for use in metal–oxide–semiconductor field effect transistor (MOSFET) gate dielectric applications. Based on transmission electron microscopy and medium-energy ion scattering spectroscopy (MEIS) analysis, an abrupt interface between stoichiometric top-layer Al2O3 and ZrO2 was found. Interfacial layers such as Zr–Al–O and Al–Si–O were also observed. An electrical equivalent oxide thickness as thin as 10.2 A with a quantum mechanical correction was obtained. Additional plasma nitridation of nanolaminte in N2 led to a significant reduction in the interfacial oxidation of nanolaminate which was confirmed by x-ray photoelectron spectroscopy, MEIS, and capacitance–voltage (C–V) analysis. The nanolaminate film represents a promising alternative for gate dielectric applications of future sub-100 nm MOSFET.

[1]  Hyunsang Hwang,et al.  Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 , 2001 .

[2]  Heiji Watanabe.  Interface engineering of a ZrO2/SiO2/Si layered structure by in situ reoxidation and its oxygen-pressure-dependent thermal stability , 2001 .

[3]  K. Saraswat,et al.  Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition , 2001 .

[4]  Dim-Lee Kwong,et al.  Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100) , 2001 .

[5]  Y. Tsunashima,et al.  Conformable formation of high quality ultra-thin amorphous Ta/sub 2/O/sub 5/ gate dielectrics utilizing water assisted deposition (WAD) for sub 50 nm damascene metal gate MOSFETs , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[6]  Jack C. Lee,et al.  Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application , 2000 .

[7]  J. Curless,et al.  Field effect transistors with SrTiO3 gate dielectric on Si , 2000 .

[8]  H. Zhang,et al.  High permittivity thin film nanolaminates , 2000 .

[9]  Evgeni P. Gusev,et al.  Structure and stability of ultrathin zirconium oxide layers on Si(001) , 2000 .

[10]  Eduard A. Cartier,et al.  High-resolution depth profiling in ultrathin Al2O3 films on Si , 2000 .

[11]  Robert M. Wallace,et al.  Stable zirconium silicate gate dielectrics deposited directly on silicon , 2000 .

[12]  Eduard A. Cartier,et al.  High-resolution depth profiling in ultrathin Al/sub 2/O/sub 3/ films on Si , 2000 .

[13]  W. Epling,et al.  Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100) , 1999 .

[14]  Jack C. Lee,et al.  Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films , 1999 .

[15]  Robert M. Wallace,et al.  ELECTRICAL PROPERTIES OF HAFNIUM SILICATE GATE DIELECTRICS DEPOSITED DIRECTLY ON SILICON , 1999 .

[16]  C. A. Billman,et al.  Alternate Gate Oxides for Silicon Mosfets Using High- k Dielectrics , 1999 .

[17]  Aron Pinczuk,et al.  Nitrogen plasma annealing for low temperature Ta2O5 films , 1998 .

[18]  Mikko Ritala,et al.  Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates , 1996 .