论文信息 - Epitaxial growth and strain relaxation of BaTiO3 thin films on SrTiO3 buffered (001) Si by molecular beam epitaxy

Epitaxial growth and strain relaxation of BaTiO3 thin films on SrTiO3 buffered (001) Si by molecular beam epitaxy

Epitaxial BaTiO3 (BTO) thin films were deposited by molecular beam epitaxy on (001) silicon using an approximately 5 ML thick SrTiO3 (STO) as an intermediate buffer layer. In situ reflection high-energy electron diffraction (RHEED) was employed to quantitatively determine strain relaxation from the change in the in-plane lattice spacing. The crystalline quality, composition, and surface morphology of the BTO thin films were characterized by a combination of x-ray diffraction (XRD), atomic force microscopy, and x-ray photoelectron spectroscopy. RHEED analysis indicates that the initial growth of BTO was pseudomorphic. Strain relaxation occurred when the thickness reached a critical value of 10 MLs or 4nm. The lattice spacing approached the bulk BTO value for films with 30nm thickness. The BTO layer grows via a two dimensional growth mode. XRD measurement indicates a rocking curving width of the BTO (002) peak on Si as low as 0.9° has been achieved. Strain relaxation of the BTO films grown on different subs...

Bruce W Wessels | B. Wessels | F. Niu | F. Niu

[1] B. Wessels,et al. Epitaxial thin films of MgO on Si using metalorganic molecular beam epitaxy , 2000 .

[2] J. Lettieri,et al. Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon , 2002 .

[3] D. Towner,et al. Three Dimensional Domain Structure in Epitaxial Barium Titanate Thin Films , 2004 .

[4] K. Kurihara,et al. Epitaxial ferroelectric thin films on silicon substrates for future electronic devices , 2002 .

[5] D. Schlom,et al. Thermodynamic stability of binary oxides in contact With silicon , 1996 .

[6] R. Droopad,et al. Crystalline oxide-based devices on silicon substrates , 2003 .

[7] Long-qing Chen,et al. Temperature-strain phase diagram for BaTiO3 thin films , 2006 .

[8] S. Alpay,et al. Thermodynamics of polydomain heterostructures. III. Domain stability map , 1998 .

[9] B. Wessels,et al. Integration of BaTiO3 on Si (0 0 1) using MgO/STO buffer layers by molecular beam epitaxy , 2006 .

[10] R. Mckee,et al. Crystalline Oxides on Silicon: The First Five Monolayers , 1998 .

[11] D. Fork,et al. Epitaxial MgO on Si(001) for Y‐Ba‐Cu‐O thin‐film growth by pulsed laser deposition , 1991 .

[12] J. Woicik,et al. c-axis oriented epitaxial BaTiO3 films on (001) Si , 2006 .

[13] Hao Li,et al. Advances in heteroepitaxy of oxides on silicon , 2004 .