Constant threshold resistivity in the metal-insulator transition of VO 2

J. Cao,1,2 W. Fan,1,3 K. Chen,4 N. Tamura,4 M. Kunz,4 V. Eyert,5 and J. Wu1,2,* 1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 3Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Hefei, China 4Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 5Institute for Physics, University of Augsburg, Augsburg 86135, Germany Received 10 October 2010; revised manuscript received 2 November 2010; published 7 December 2010