Modélisation Petit Signal du Transistor PHEMT et Analyse des Performances Hyperfréquences

Resume: La connaissance des elements du circuit equivalent petit signal des transistors microondes a effet de champ GaAs (FETs) est crucial pour une conception fiable de circuits analogique tels que les amplificateurs faible bruit (LNA ou "low noise amplifiers") et pour l'analyse de leurs performances haute frequence. Cet article rapporte les resultats de l'application d'un procede analytique ameliore pour une extraction directe du modele petit signal a partir de mesures des parametres S de dispersion ou "scattering parameters". L’extraction des parametres du schema equivalent petit signal est faite pour des transistors pseudomorphiques a heterojonction (pHEMT ou "pseudomorphic high electron mobility transistor") de la technologie GaAs et InP ayant une grille de largeur 200 μm et de longueur 1 μm. Le comportement des elements intrinseques en fonction des diverses conditions de polarisation est ensuite examine. Une bonne concordance entre les parametres S simules et mesures confirme la validite de la methode proposee. Mots cles : extraction, HEMT, parametres extrinseques pHEMT, parametres intrinseques, modelisation petit signal.

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