Numerical simulation of a p-n-p-n color sensor for simultaneous color detection

Abstract Numerical simulation results of the electrostatic potential and output photoresponse are presented for a p-n-p-n device structure that allows simultaneous detection of the three primary colors. The simulated terminal behavior is based on a simultaneous solution of Poisson's equation and the electron and hole continuity equations in two dimensions, using the readily available commercial device simulator, PISCES-2B. The photogeneration of electron-hole pairs is accounted for by using the well-known wavelength dependence of absorption in silicon. The device doping profile, for efficient separation of different wavelengths (colors), is optimized using SUPREM-IV.