Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm2 (for L=2000 μm) and 75 A/cm2, respectively. The utilization of a tensile-strained GaAs0.67P0.33 buffer layer and GaAs0.85P0.15 barrier layers allows a highly-compressively-strained In0.4Ga0.6As0.995N0.005 QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency (ηinj∼97%).

[1]  Kouji Nakahara,et al.  GaInNAs: a novel material for long-wavelength semiconductor lasers , 1997 .

[2]  Wolfgang Stolz,et al.  Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 /spl mu/m , 1999 .

[3]  S. Corzine,et al.  Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio , 2002 .

[4]  J.S. Harris,et al.  Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m , 2002, IEEE Photonics Technology Letters.

[5]  Stephen J. Sweeney,et al.  Insights into carrier recombination processes in 1.3 [micro sign]m GaInNAs-based semiconductor lasers attained using high pressure , 2001 .

[6]  S. Forrest,et al.  High T/sub 0/ long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source , 2002, IEEE Photonics Technology Letters.

[7]  L. Mawst,et al.  Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers , 2002, IEEE Photonics Technology Letters.

[8]  Shunichi Sato,et al.  Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition , 2000 .

[9]  Kent D. Choquette,et al.  Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um , 2000 .

[10]  Kenichi Iga,et al.  Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition , 2001 .

[11]  L. Mawst,et al.  High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers , 2001, IEEE Photonics Technology Letters.

[12]  L. Mawst,et al.  Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers , 2002, IEEE Photonics Technology Letters.

[13]  M. Pessa,et al.  1.32-μm GaInNAs-GaAs laser with a low threshold current density , 2002, IEEE Photonics Technology Letters.