The temperature characteristics of bipolar transistors fabricated in CMOS technology

Abstract This paper presents the results of an experimental investigation of the temperature characteristics of bipolar transistors fabricated in CMOS technology. These results have to be known and understood to enable the design of high-performance temperature sensors and bandgap references in CMOS integrated circuits. The non-idealities of proportional to the absolute temperature voltage (VPTAT) have been studied, and the results show that we can generate accurate PTAT voltages by optimizing the operating condition and layout of the transistors (error