Traveling-wave semiconductor laser amplifiers for optical communications systems

The state of the art and future possibilities for semiconductor laser amplifiers (SLAs) are reviewed. Design criteria for improving SLA characteristics are clarified from the viewpoint of both material gain parameters and amplifier operating conditions. It is shown that essential amplifier characteristics for communications system applications are high saturation power and a small noise figure, which are achieved by traveling-wave semiconductor laser amplifiers (TWAs). Antireflection (AR) coating, angled facet structures, and window facet structures are discussed to reduce facet reflection for the fabrication of TWAs.<<ETX>>

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