Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices

We illustrate inherent subtle differences between Single Event Transients generated by above bandgap picosecond lasers and MeV heavy ions in a Si junction by comparing transient currents collected on a p-i-n structure using an MeV ion microbeam and picosecond laser with variable spot size. Differences between the ion and laser results are discussed and Synopsis Technology CAD simulations are employed to examine differences in plasma dynamics leading to the observed transient current dependence on initial track conditions

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