论文信息 - Low-threshold CW operation of square-shaped semiconductor ring lasers (orbiter lasers)

Low-threshold CW operation of square-shaped semiconductor ring lasers (orbiter lasers)

The CW operation of square-shaped semiconductor ring lasers is demonstrated with a threshold current as low as 6 mA. The ring resonator consists of straight waveguides and four total reflection mirrors. The lasers are fabricated using Br/sub 2/ dry etching on an InGaAs/GaAs strained single-quantum-well graded-index separate-confinement heterostructure wafer. The low-threshold CW operation is due to the high differential gain of the wafer and the low-loss total reflection mirror.<<ETX>>

[1] Mitsuo Fukuda,et al. High-power 0.98 mu m GaInAs strained quantum well lasers for Er/sup 3+/-doped fibre amplifier , 1989 .

[2] Peter J. R. Laybourn,et al. Polyimide-Embedded Semiconductor Ring Lasers. , 1989, Other Conferences.

[3] S. Oku,et al. Design and Performance of Monolithic LD Optical Matrix Switches , 1990 .

[4] T. Krauss,et al. CW operation of semiconductor ring lasers , 1990 .

[5] H. Casey,et al. Heterostructure lasers , 1978 .

[6] P.J.R. Laybourn,et al. Integrated semiconductor ring lasers , 1988 .

[7] P. Zory,et al. Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers , 1987 .

[8] S. Uehara,et al. Low-Threshold Strained-Layer InGaAs Ridge Waveguide Lasers , 1990 .