论文信息 - High-carrier-density electron dynamics in low-temperature-grown GaAs

High-carrier-density electron dynamics in low-temperature-grown GaAs

Pump-probe differential transmission measurements examine high-carrier-density phenomena in as-grown and annealed GaAs samples grown at temperatures from 210 to 270 °C. We observe trap saturation and Auger recombination, and accurately model the measurements on annealed samples with a simple two level rate equation, allowing us to extract the trapped-electron lifetimes.

[1] U. Keller,et al. Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide , 1996 .

[2] Michael R. Melloch,et al. Carrier lifetime versus anneal in low temperature growth GaAs , 1993 .

[3] Gerard Mourou,et al. Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures , 1991 .

[4] S. Gupta,et al. Structure and carrier lifetime in LT-GaAs , 1993 .

[5] P. Langot,et al. Femtosecond hole thermalization in bulk GaAs , 1995 .

[6] Andreas Othonos,et al. Ultrafast dynamics of nonlinear absorption in low‐temperature‐grown GaAs , 1996 .

[7] Michael R. Melloch,et al. The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs , 1996 .

[8] T. Norris,et al. Femtosecond pulse amplification at 250 kHz with a Ti:sapphire regenerative amplifier and application to continuum generation. , 1992, Optics letters.